Êàòàëîã ïðîäóêöèè

Òèï ìîíòàæà	Through Hole
Ôàñîâêà	Tube
FET Type	MOSFET P-Channel, Metal Oxide
FET Feature	Standard
Vgs(th) (Max) @ Id	4V @ 250µA
Current - Continuous Drain (Id) @ 25° C	13A
Óïàêîâêà / Êîðîáêà	TO-262-3 Long Leads, I?Pak, TO-262AA
Drain to Source Voltage (Vdss)	150V
Âõîäíàÿ åìêîñòü (Ciss) @ Vds	860pF @ 25V
Gate Charge (Qg) @ Vgs	66nC @ 10V
Ñåðèÿ	HEXFET®
Ìàêñèìàëüíàÿ ìîùíîñòü	3.8W
Òèï	TO-262
Rds On (Max) @ Id, Vgs	290 mOhm @ 6.6A, 10V

Òî÷íûå òåõíè÷åñêèå õàðàêòåðèñòèêè è âîçìîæíîñòü çàìåíû âû ìîæåòå óòî÷íèòü ó íàøèõ ìåíåäæåðîâ

Êîìïàíèÿ Èíòåðèÿ ïðîäàæà ñî ñêëàäà ñ äîñòàâêîé ïî âûãîäíûì äëÿ âàñ öåíàì ìèêðîñõåì ðàçúåìîâ è ýëåìåíòîâ.

Öåíû â ïîèñêå äàíû ìåëêîîïòîâûå. Ìèíèìàëüíàÿ ñóììà çàêàçà îäíîé ïîçèöèè 1500 ðóáëåé!

Ïðèâåäåííàÿ èíôîðìàöèÿ íîñèò ñïðàâî÷íûé õàðàêòåð è íå ÿâëÿåòñÿ ïóáëè÷íîé îôåðòîé â ñîîòâåòñòâèè ñ ïóíêòîì 2 ñòàòüè 437 ÃÊ ÐÔ. Ïðè çàêàçå òîâàðà ÷åðåç ñàéò Âàì áóäåò âûñòàâëåí ñ÷åò íà îïëàòó â ðåæèìå îíëàéí, òîâàð çàáðîíèðîâàí íà 5 ðàáî÷èõ äíåé è çàôèêñèðîâàíà öåíà íà äåíü ïîêóïêè. IRF6215L